bNACOUNeuron
Subsections
bNACOUNeuron
Uses AHP_Channel
 ge (S) :
 exc and inh conductances (noise)
 gi (S) :
 exc and inh conductances (noise)
 ge0 (S) :
 exc and inh mean conductances (noise)
 gi0 (S) :
 exc and inh mean conductances (noise)
 tau_e (S) :
 time constants and std for exc and inh conductances (noise)
 tau_i (S) :
 time constants and std for exc and inh conductances (noise)
 sig_e (S) :
 time constants and std for exc and inh conductances (noise)
 sig_i (S) :
 time constants and std for exc and inh conductances (noise)
 Ee (V) :
 Reversal potential for exc and inh currents (noise)
 Ei (V) :
 Reversal potential for exc and inh currents (noise)
 STempHeight (Volt) :
 Height
 Vthresh (V) :
 If V_{m} exceeds V_{thresh} a spike is emmited.
 Vreset (V) :
 The voltage to reset V_{m} to after a spike.
 doReset (flag) :
 Flag which determines wheter V_{m} should be reseted after a spike
 Trefract (sec) :
 Length of the absolute refractory period.
 nummethod (flag) :
 Numerical method for the solution of the differential equation: Exp. Euler = 0, CrankNicolson = 1
 type :
 Type (e.g. inhibitory or excitatory) of the neuron
 Cm (F) :
 The membrane capacity C_{m}
 Rm (Ohm) :
 The membrane resistance R_{m}
 Vresting (V) :
 The resting membrane voltage.
 Vinit (V) :
 Initial condition forV_{m} at time t=0.
 VmScale (V) :
 Defines the difference between Vresting and the Vthresh for the calculation of the iongate tables and the ionbuffer Erev.
 Inoise (W^{2}) :
 Variance of the noise to be added each integration time constant.
 Iinject (A) :
 Constant current to be injected into the CB neuron.
 Em (V) :
 The reversal potential of the leakage channel
 Vm (V) :
 The membrane voltage
 OuInoise :
 noise input current
 OuGnoise :
 noise input conductance
 Isyn :
 synaptic input current
 Gsyn :
 synaptic input conductance
 nIncoming :
 Number of incoming synapses
 nOutgoing :
 Number of outgoing synapses
 nBuffers :
 Number of ion buffers
 nChannels :
 Number of channels
