HHNeuron
Subsections
HHNeuron
The model is based on a CbNeuron and includes the HH_K_Channel and HH_Na_Channel for action potetial generation.
 Vthresh (V) :
 If V_{m} exceeds V_{thresh} a spike is emmited.
 Vreset (V) :
 The voltage to reset V_{m} to after a spike.
 doReset (flag) :
 Flag which determines wheter V_{m} should be reseted after a spike
 Trefract (sec) :
 Length of the absolute refractory period.
 nummethod (flag) :
 Numerical method for the solution of the differential equation: Exp. Euler = 0, CrankNicolson = 1
 type :
 Type (e.g. inhibitory or excitatory) of the neuron
 Cm (F) :
 The membrane capacity C_{m}
 Rm (Ohm) :
 The membrane resistance R_{m}
 Vresting (V) :
 The resting membrane voltage.
 Vinit (V) :
 Initial condition forV_{m} at time t=0.
 VmScale (V) :
 Defines the difference between Vresting and the Vthresh for the calculation of the iongate tables and the ionbuffer Erev.
 Inoise (W^{2}) :
 Variance of the noise to be added each integration time constant.
 Iinject (A) :
 Constant current to be injected into the CB neuron.
 Em (V) :
 The reversal potential of the leakage channel
 Vm (V) :
 The membrane voltage
 Isyn :
 synaptic input current
 Gsyn :
 synaptic input conductance
 nIncoming :
 Number of incoming synapses
 nOutgoing :
 Number of outgoing synapses
 nBuffers :
 Number of ion buffers
 nChannels :
 Number of channels
